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Issue 4, 2011
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Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

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Abstract

The morphology and optical properties of In0.35Ga0.65As/GaAs quantum dots (QDs) grown on (210), (311)A, (711)A, (731) and (100) substrates are investigated. QDs formed on (210) and (731) oriented substrates are grown by molecular beam epitaxy. Regular QDs are observed on (100), (311)A, and (711)A. Randomly distributed QDs and comet-shaped QDs form on (210) and (731) substrates, respectively. A high density of QDs on the order of 1011 cm−2 are obtained from (711)A. The optical measurement shows a spectrum linewidth (FWHM = 74.3 nm) of QDs on GaAs (210) three times wider than GaAs (100) substrate. Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications.

Graphical abstract: Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

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Publication details

The article was received on 12 Dec 2010, accepted on 25 Jan 2011 and first published on 08 Mar 2011


Article type: Communication
DOI: 10.1039/C0NR00973C
Citation: Nanoscale, 2011,3, 1485-1488
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    Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

    J. Wu, Z. M. Wang, V. G. Dorogan, S. Li, Y. I. Mazur and G. J. Salamo, Nanoscale, 2011, 3, 1485
    DOI: 10.1039/C0NR00973C

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