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Issue 3, 2011
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Morphological impact of zinc oxide layers on the device performance in thin-film transistors

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Abstract

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V−1s−1 compared to 0.6 cm2 V−1s−1 for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

Graphical abstract: Morphological impact of zinc oxide layers on the device performance in thin-film transistors

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Publication details

The article was received on 27 Oct 2010, accepted on 10 Nov 2010 and first published on 29 Nov 2010


Article type: Communication
DOI: 10.1039/C0NR00800A
Citation: Nanoscale, 2011,3, 897-899
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    Morphological impact of zinc oxide layers on the device performance in thin-film transistors

    H. Faber, M. Klaumünzer, M. Voigt, D. Galli, B. F. Vieweg, W. Peukert, E. Spiecker and M. Halik, Nanoscale, 2011, 3, 897
    DOI: 10.1039/C0NR00800A

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