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A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology
Impact Factor 7.76 48 Issues per Year
Communication

From stochastic single atomic switch to nanoscale resistive memory device

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Corresponding authors
a
Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, 1111 Budapest, Budafoki út 8, Hungary
E-mail: geresdi.attila@wigner.bme.hu
Nanoscale, 2011,3, 1504-1507

DOI: 10.1039/C0NR00951B
Received 06 Dec 2010, Accepted 21 Feb 2011
First published online 15 Mar 2011
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