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Issue 44, 2011
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Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

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Abstract

InGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.

Graphical abstract: Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

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Publication details

The article was received on 30 Jul 2011, accepted on 08 Sep 2011 and first published on 12 Oct 2011


Article type: Paper
DOI: 10.1039/C1JM13640B
Citation: J. Mater. Chem., 2011,21, 17688-17692
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    Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

    D. Jeon, W. M. Choi, H. Shin, S. Yoon, J. Choi, L. Jang and I. Lee, J. Mater. Chem., 2011, 21, 17688
    DOI: 10.1039/C1JM13640B

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