Jump to main content
Jump to site search

Issue 39, 2011
Previous Article Next Article

Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films

Author affiliations

Abstract

We demonstrate high current rectification in a new system comprising 30 nm of hydrated vanadium pentoxide and 100 nm of zinc oxide (V2O5·nH2O–ZnO) thin film structures. The devices are prepared using a low temperature (<150 °C), all atomic layer deposition process. A key element in the rectifying properties comes from anomalous p-type conductivity in V2O5 – an otherwise well known n-type semiconductor. Experimental evidence points to protonic (H+) conductivity due to intercalated water in V2O5 as the source for p-type behaviour, while the ZnO is known to be electronically n-type. Thus, the diode behaves as a novel, mixed mode ionic-electronic rectifier. Further, we show that the diode characteristics are strongly dependent on the electrode material in contact with V2O5·nH2O. A high Ion/Ioff ratio (598) at ± 2 V is obtained for oxygen-free Pt electrodes, whereas a low Ion/Ioff ratio (19) is obtained for oxygen-rich ITO electrodes, suggesting the deleterious effects of oxygen atom reactivity to device characteristics.

Graphical abstract: Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films

Back to tab navigation

Supplementary files

Publication details

The article was received on 07 Jun 2011, accepted on 01 Aug 2011 and first published on 01 Sep 2011


Article type: Paper
DOI: 10.1039/C1JM12595H
Citation: J. Mater. Chem., 2011,21, 15391-15397
  •   Request permissions

    Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films

    P. Banerjee, X. Chen, K. Gregorczyk, L. Henn-Lecordier and G. W. Rubloff, J. Mater. Chem., 2011, 21, 15391
    DOI: 10.1039/C1JM12595H

Search articles by author

Spotlight

Advertisements