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Issue 43, 2011
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Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices

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Abstract

The impact of electronic structures on the functionality of transition metal oxide-based intermediate connectors for tandem organic light-emitting devices is investigated by studying the interfaces and the corresponding devices. For a typical transition metal oxide-based intermediate connector, consisting of a heterointerface between MoO3 and Mg-doped tris(8-quinolinolato)aluminum (Mg:Alq3), it is identified that MoO3 is essential to the charge generation and separation process, which occurs at the interface between MoO3 and the adjacent hole-transporting layer (HTL) viaelectron transfer from the highest occupied molecular orbital of the HTL into the conduction band of MoO3. In addition, the incorporation of a Mg:Alq3 layer is indispensable to the functionality of the intermediate connector, which not only facilitates the electron injection from MoO3 into the electron-transporting layer of the adjacent electroluminescent (EL) unit, but also blocks the leakage of holes across the intermediate connector into the HTL of the other adjacent EL unit.

Graphical abstract: Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices

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Publication details

The article was received on 02 Jun 2011, accepted on 30 Aug 2011 and first published on 26 Sep 2011


Article type: Paper
DOI: 10.1039/C1JM12515J
Citation: J. Mater. Chem., 2011,21, 17476-17482
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    Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices

    Q. Bao, J. Yang, Y. Xiao, Y. Deng, S. Lee, Y. Li and J. Tang, J. Mater. Chem., 2011, 21, 17476
    DOI: 10.1039/C1JM12515J

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