This website uses cookies to give you the best user experience. If you continue
without changing your settings we'll assume you are happy to receive all RSC cookies.
You can change your cookie settings by navigating to our Privacy and Cookies page and following the instructions. These instructions
are also obtainable from the privacy link at the bottom of any RSC page.
Journal of Materials Chemistry was published between 1991 and 2012. From issue 1, 2013, it was replaced by three new journals: Journal of Materials Chemistry A, B and C
Argonne National Laboratory, Center for Nanoscale Materials, 9700 South Cass Avenue, Argonne, USA
E-mail: darling@anl.gov
; Fax: +630-252-4646
; Tel: +630-252-4580
b
Argonne National Laboratory, Energy Systems Division, 9700 South Cass Avenue, Argonne, USA
J. Mater. Chem., 2011,21, 11722-11725
DOI:
10.1039/C1JM12461G
Received
31 May 2011,
Accepted
22 Jun 2011
First published online
06 Jul 2011
Etch resistance of two commonly used lithography resists is increased significantly by sequential infiltration synthesis (SIS). Exposing films to trimethyl-aluminum and water with long dosage times infiltrates the bulk of the film with alumina, which renders them dramatically more resistant to plasma etching with no degradation to the patterns. Enhanced etch resistance eliminates the need for an intermediate hard mask and the concomitant costs and pattern fidelity losses. Moreover, by allowing for thinner resist films, this approach can improve the final pattern resolution.
Fetching data from CrossRef. This may take some time to load.
This may take some time to load.
Journal of Materials Chemistry
- Information Point
This text is added as a work around for heading error in Accessibility testing