Issue 39, 2011

Organic thin-film transistors with a photo-patternable semiconducting polymer blend

Abstract

A blend of organic semiconductors and photocrosslinkable insulating polymers was photolithographically patterned to yield organic thin-film transistors (OTFTs). The semiconducting polymer of the blend, poly(3-hexylthiophene), was present as a nanofibrillar network and yielded excellent electronic properties. The insulating polymer matrix, poly(vinyl cinnamate), provided the photosensitivity required for photopatterning. The photopatterned TFT devices showed large on/off ratios (>105) and high mobilities (0.015 cm2 Vāˆ’1sāˆ’1) comparable to those of devices patterned by conventional means using the same semiconducting materials. This simple method permitted the high-resolution cost-effective patterning of organic semiconductors and may play an important role in the mass-production of organic electronic devices.

Graphical abstract: Organic thin-film transistors with a photo-patternable semiconducting polymer blend

Article information

Article type
Paper
Submitted
26 May 2011
Accepted
01 Aug 2011
First published
30 Aug 2011

J. Mater. Chem., 2011,21, 15637-15642

Organic thin-film transistors with a photo-patternable semiconducting polymer blend

L. Qiu, Q. Xu, W. H. Lee, X. Wang, B. Kang, G. Lv and K. Cho, J. Mater. Chem., 2011, 21, 15637 DOI: 10.1039/C1JM12366A

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