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Issue 34, 2011
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Voltage-dependent low-field resistivity of CaTiO3:Zn ceramics

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Abstract

The bulk and grain boundary conductivities of Ca(Ti1−xZnx)O3−x ceramics increase with time under a dc-bias voltage of ≤100Vcm−1 and at temperatures in the range 250 to 600 °C. This low field effect, which is not observed in undoped CaTiO3, is attributed to the nature of a defect structure that contains Zn located on a Ti site, giving rise to underbonded surrounding oxide ions that are readily ionised on application of a dc bias. The conduction is predominantly p-type since holes, located on oxygen as O ions, are more mobile than both the ionised electrons which are trapped, probably at the sample surface, and oxygen vacancies which form as charge compensation for the Zn2+ acceptor dopant. The conductivity increase is reversible on removal of the dc bias. The electrical properties of the ceramics were modelled successfully using an equivalent electrical circuit consisting of a parallel combination of a resistor, R, capacitor, C, and constant phase element, CPE, to model the bulk response, in series with a similar circuit to model the grain boundary response. At the highest temperatures, an additional parallel RC element was added in series to model the sample-electrode response.

Graphical abstract: Voltage-dependent low-field resistivity of CaTiO3:Zn ceramics

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Publication details

The article was received on 06 Apr 2011, accepted on 27 Jun 2011 and first published on 25 Jul 2011


Article type: Paper
DOI: 10.1039/C1JM11453K
Citation: J. Mater. Chem., 2011,21, 12894-12900
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    Voltage-dependent low-field resistivity of CaTiO3:Zn ceramics

    Q. Zhang, N. Masó, Y. Liu, H. Yang and A. R. West, J. Mater. Chem., 2011, 21, 12894
    DOI: 10.1039/C1JM11453K

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