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Issue 29, 2011
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Facile synthesis of mesoporous carbon nitrides using the incipient wetness method and the application as hydrogen adsorbent

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Abstract

Highly nitrogen-enriched mesoporous carbon nitride materials with 2-dimensional (2-D) (2D-meso-CN) and 3-dimensional (3-D) mesostructures (3D-meso-CN) were synthesized using mesoporous silica as a hard template and cyanamide as a precursor via the incipient wetness process without using any solvent. The materials were characterized by small-angle X-ray scattering (SAXS), X-ray diffraction (XRD), and transmission electron microscopy (TEM) for the mesostructure analysis, N2 adsorption–desorption isotherms for surface area and pore size distribution, and X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared (FT-IR) spectroscopy for the composition analysis of frameworks. The mesoporous carbon nitride replicas have graphitic-like stacking of carbon nitride sheets in mesopore walls. The N/C ratio of the mesoporous carbon nitride replicas is 1.13 after the carbonization at 550 °C for 3 h. 2D-meso-CN and 3D-meso-CN have the BET surface area of 361 and 343 m2 g−1, large pore volume of 0.50 and 0.67 cm3 g−1, and pore diameter of 27.8 Å (for 2D-meso-CN), 24.5 and 80.3 Å (for 3D-meso-CN), respectively. It was found that the 3D-meso-CN has higher capacity of hydrogen uptake of 0.25 wt% than the pure mesoporous carbon FDU-15 (0.16 wt%) at 50 bar under room temperature (298 K).

Graphical abstract: Facile synthesis of mesoporous carbon nitrides using the incipient wetness method and the application as hydrogen adsorbent

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Publication details

The article was received on 25 Feb 2011, accepted on 12 May 2011 and first published on 20 Jun 2011


Article type: Paper
DOI: 10.1039/C1JM10849B
Citation: J. Mater. Chem., 2011,21, 10801-10807
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    Facile synthesis of mesoporous carbon nitrides using the incipient wetness method and the application as hydrogen adsorbent

    S. S. Park, S. Chu, C. Xue, D. Zhao and C. Ha, J. Mater. Chem., 2011, 21, 10801
    DOI: 10.1039/C1JM10849B

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