Jump to main content
Jump to site search

Issue 19, 2011
Previous Article Next Article

Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors

Author affiliations

Abstract

We have demonstrated the preparation of interpenetrating polymer network (IPN) dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers (PMMA, PtBMA, and PS) with the crosslinkable polymeric silsesquiazane (SSQZ). This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as two orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths.

Graphical abstract: Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors

Back to tab navigation

Supplementary files

Publication details

The article was received on 07 Jan 2011, accepted on 03 Mar 2011 and first published on 30 Mar 2011


Article type: Paper
DOI: 10.1039/C1JM10084J
Citation: J. Mater. Chem., 2011,21, 6968-6974
  •   Request permissions

    Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors

    H. S. Lee, K. Park, J. Kim, T. Han, K. H. Ryu, H. S. Lim, D. R. Lee, Y. Kwark and J. H. Cho, J. Mater. Chem., 2011, 21, 6968
    DOI: 10.1039/C1JM10084J

Search articles by author

Spotlight

Advertisements