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Issue 18, 2011
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Surface induced negative photoconductivity in p-type ZnSe<img border='0' src='http://www.rsc.org/images/entities/h2_char_2009.gif' alt=' '/>:<img border='0' src='http://www.rsc.org/images/entities/h2_char_2009.gif' alt=' '/>Bi nanowires and their nano-optoelectronic applications

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Abstract

Single-crystal p-type ZnSe nanowires (NWs) with zinc blende structure and [21–1] growth direction were synthesized by using bismuth (Bi) as dopant via a thermal co-evaporation method. The ZnSe : Bi NWs showed evident p-type conductivity with hole concentration up to 4.1 × 1018 cm−3 after the acceptor activation. Negative photoconductivity was first investigated in the p-ZnSe NWs, i.e., the conductivity of the NWs under light was dramatically lower than that in the dark. Surface effects arising from oxygen absorption and photo-desorption were suggested to be responsible for this. By using Al as the Schottky gate, high-performance nano-metal-semiconductor field-effect transistors (nanoMESFETs) were constructed, and measurements on the Al/p-ZnSe NW Schottky diode also revealed the bias-dependent photoresponse. It is expected that the p-type ZnSe : Bi NWs will have great potential in nano-optoelectronic applications.

Graphical abstract: Surface induced negative photoconductivity in p-type ZnSe<img border='0' src='http://www.rsc.org/images/entities/char_2009.gif' alt=' '/>:<img border='0' src='http://www.rsc.org/images/entities/char_2009.gif' alt=' '/>Bi nanowires and their nano-optoelectronic applications

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Publication details

The article was received on 04 Jan 2011, accepted on 03 Mar 2011 and first published on 31 Mar 2011


Article type: Paper
DOI: 10.1039/C1JM00035G
Citation: J. Mater. Chem., 2011,21, 6736-6741
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    Surface induced negative photoconductivity in p-type ZnSe<img border='0' src='http://www.rsc.org/images/entities/h2_char_2009.gif' alt=' '/>:<img border='0' src='http://www.rsc.org/images/entities/h2_char_2009.gif' alt=' '/>Bi nanowires and their nano-optoelectronic applications

    X. Zhang, J. Jie, Z. Wang, C. Wu, L. Wang, Q. Peng, Y. Yu, P. Jiang and C. Xie, J. Mater. Chem., 2011, 21, 6736
    DOI: 10.1039/C1JM00035G

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