An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires

Zhiming Wu; Yong Zhang; Jinjian Zheng; Xiangan Lin; Xiaohang Chen; Binwang Huang; Huiqiong Wang; Kai Huang; Shuping Li; Junyong Kang

doi:10.1039/C0JM03971C

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Journal of Materials Chemistry

Issue 16, 2011

Journal of Materials Chemistry was published between 1991 and 2012. From issue 1, 2013, it was replaced by three new journals: Journal of Materials Chemistry A, B and C

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An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires

Zhiming Wu,*^a Yong Zhang,^b Jinjian Zheng,^a Xiangan Lin,^a Xiaohang Chen,^a Binwang Huang,^a Huiqiong Wang,^a Kai Huang,^a Shuping Li^a and Junyong Kang*^a

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Corresponding authors

Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, P. R. China
E-mail: zmwu@xmu.edu.cn

Department of Electrical and Computer Engineering and Center for Optoelectronics, University of North Carolina at Charlotte, Charlotte, USA

J. Mater. Chem., 2011,21, 6020-6026

DOI: 10.1039/C0JM03971C
Received 18 Nov 2010, Accepted 16 Feb 2011
First published online 14 Mar 2011

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Abstract
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Well-aligned ZnO/ZnSe core/shell nanowire arrays with type-II energy alignment are synthesized via a two-step chemical vapor deposition method. Morphology and structure studies reveal a transition layer of wurtzite ZnSe between the wurtzite ZnO core and the cubic ZnSe shell. Type-II interfacial transitions are observed in the spectral region from visible to near infrared in transmission and photoluminescence. More significantly, for the first time, the interfacial transition is shown to extend the photoresponse of the prototype photovoltaic device based on the coaxial nanowire array to a threshold much below the bandgap of either component (3.3 and 2.7 eV, respectively) at 1.6 eV, with an external quantum efficiency of [similar] 4% at 1.9 eV and 9.5% at 3 eV. These results represent a major advance towards the realization of all-inorganic type-II heterojunction photovoltaic devices in an optimal device architecture.

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