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Issue 7, 2011
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Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units

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Abstract

The synthesis of a new conjugated material is reported; BDHTTBBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTTBBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.

Graphical abstract: Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units

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Publication details

The article was received on 10 Aug 2010, accepted on 15 Oct 2010 and first published on 08 Nov 2010


Article type: Paper
DOI: 10.1039/C0JM02607G
Citation: J. Mater. Chem., 2011,21, 2091-2097
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    Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units

    G. J. McEntee, F. Vilela, P. J. Skabara, T. D. Anthopoulos, J. G. Labram, S. Tierney, R. W. Harrington and W. Clegg, J. Mater. Chem., 2011, 21, 2091
    DOI: 10.1039/C0JM02607G

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