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Issue 40, 2011
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A continuous process for Si nanowires with prescribed lengths

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Abstract

A simple top–down approach for the continuous mass preparation of single crystalline silicon nanowires (SiNWs) with controlled lengths was developed. The approach is based on periodic pulsing of anodic bias during gold-assisted chemical etching of a silicon substrate and subsequent ultrasonic treatment of the resulting porosity-patterned SiNWs for selective breakage of nanowires at the porous segments, and allows us to overcome some of the drawbacks in conventional bottom–up methods for SiNW growth.

Graphical abstract: A continuous process for Si nanowires with prescribed lengths

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Publication details

The article was received on 08 Aug 2011, accepted on 27 Aug 2011 and first published on 14 Sep 2011


Article type: Communication
DOI: 10.1039/C1JM13831F
Citation: J. Mater. Chem., 2011,21, 15889-15894
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    A continuous process for Si nanowires with prescribed lengths

    J. Kim, H. Rhu and W. Lee, J. Mater. Chem., 2011, 21, 15889
    DOI: 10.1039/C1JM13831F

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