Issue 41, 2011

n-Channel polymer thin film transistors with long-term air-stability and durability and their use in complementary inverters

Abstract

We report an investigation of the stability and durability of p- and n-channel polymer thin film transistors in air over a 4-year period. All-polymer p/n complementary inverters fabricated from an n-channel poly(benzobisimidazobenzophenanthroline) (BBL) transistor and a p-channel poly(3-hexylthiophene) (P3HT) transistor showed excellent switching characteristics and a large voltage gain. The electrical parameters (electron mobility, on/off current ratio, and threshold voltage) of the n-channel BBL transistors in air were found to be constant over the 4 years. The performance of the p-channel P3HT transistors deteriorated dramatically after only 2 weeks in air. The excellent stability/durability of the BBL transistors in air is explained by the closely-packed crystalline morphology which creates a kinetic barrier against diffusion of extrinsic molecules and its high electron affinity that provides energetic stability against chemical/electrochemical reactions. The results demonstrate the longest air-stability and durability of non-encapsulated organic electronic devices to date while offering insights for the design of more environmentally rugged organic semiconductors.

Graphical abstract: n-Channel polymer thin film transistors with long-term air-stability and durability and their use in complementary inverters

Article information

Article type
Paper
Submitted
26 Jun 2011
Accepted
15 Aug 2011
First published
15 Sep 2011

J. Mater. Chem., 2011,21, 16461-16466

n-Channel polymer thin film transistors with long-term air-stability and durability and their use in complementary inverters

A. L. Briseno, F. S. Kim, A. Babel, Y. Xia and S. A. Jenekhe, J. Mater. Chem., 2011, 21, 16461 DOI: 10.1039/C1JM12953H

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