Jump to main content
Jump to site search

Issue 16, 2011
Previous Article Next Article

Ultralarge-area block copolymer lithographyvia soft graphoepitaxy

Author affiliations


We introduce soft-graphoepitaxy, a cost-effective, truly scalable, ultralarge-area block copolymer lithography. Soft graphoepitaxy employs a disposable photoresist prepattern attainable by conventional lithography, such as ArF lithography or I-line lithography, to direct lateral nanodomain ordering in block copolymer thin films. Since the organic photoresist prepattern is readily disposable, this approach provides laterally ordered self-assembled nanopatterns and corresponding pattern transferred functional nanostructures without any trace of the structure directing prepattern. Furthermore, the microscale photoresist pattern can be transformed into a sub-30 nm scale ultrafine lamellar pattern over an arbitrary large area via a scalable soft-graphoepitaxy principle.

Graphical abstract: Ultralarge-area block copolymer lithographyvia soft graphoepitaxy

Back to tab navigation

Supplementary files

Publication details

The article was received on 06 Dec 2010, accepted on 31 Jan 2011 and first published on 22 Feb 2011

Article type: Highlight
DOI: 10.1039/C0JM04248J
Citation: J. Mater. Chem., 2011,21, 5856-5859
  •   Request permissions

    Ultralarge-area block copolymer lithographyvia soft graphoepitaxy

    S. Jeong and S. O. Kim, J. Mater. Chem., 2011, 21, 5856
    DOI: 10.1039/C0JM04248J

Search articles by author