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Issue 8, 2011
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Performance improvement of Sb2S3-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte

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Abstract

We found that the insertion of the poly-3-hexylthiophene (P3HT) layer into the pristine device results in great improvement of the efficiency, from 2.0% to 3.3% at 1 sun illumination. The improvement was mainly attributed to the improved fill factor, which for the Sb2S3 sensitized solar cell was seriously degraded from 56.0% (at 0.1 sun) to 31.5% (at 1 sun), whereas the fill factor of the Sb2S3/P3HT sensitized solar cell was only moderately degraded, from 59.3% (at 0.1 sun) to 40.4%. The role of P3HT as a hole buffer layer was analyzed by electrochemical impedance spectroscopy (EIS).

Graphical abstract: Performance improvement of Sb2S3-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte

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Publication details

The article was received on 05 Dec 2010, accepted on 11 Mar 2011 and first published on 18 Apr 2011


Article type: Communication
DOI: 10.1039/C0EE00741B
Citation: Energy Environ. Sci., 2011,4, 2799-2802
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    Performance improvement of Sb2S3-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte

    S. H. Im, H. Kim, J. H. Rhee, C. Lim and S. I. Seok, Energy Environ. Sci., 2011, 4, 2799
    DOI: 10.1039/C0EE00741B

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