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Issue 3, 2011
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High-performance Si microwire photovoltaics

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Abstract

Crystalline Si wires, grown by the vapor–liquid–solid (VLS) process, have emerged as promising candidate materials for low-cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (Ln ≫ 30 µm) and low surface recombination velocities (S ≪ 70 cm·s−1). Single-wire radial p–n junction solar cells were fabricated with amorphous silicon and silicon nitride surface coatings, achieving up to 9.0% apparent photovoltaic efficiency, and exhibiting up to ∼600 mV open-circuit voltage with over 80% fill factor. Projective single-wire measurements and optoelectronic simulations suggest that large-area Si wire-array solar cells have the potential to exceed 17% energy-conversion efficiency, offering a promising route toward cost-effective crystalline Si photovoltaics.

Graphical abstract: High-performance Si microwire photovoltaics

  • This article is part of the themed collection: Solar energy
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Publication details

The article was received on 12 Oct 2010, accepted on 24 Nov 2010 and first published on 07 Jan 2011


Article type: Communication
DOI: 10.1039/C0EE00549E
Citation: Energy Environ. Sci., 2011,4, 866-871
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    High-performance Si microwire photovoltaics

    M. D. Kelzenberg, D. B. Turner-Evans, M. C. Putnam, S. W. Boettcher, R. M. Briggs, J. Y. Baek, N. S. Lewis and H. A. Atwater, Energy Environ. Sci., 2011, 4, 866
    DOI: 10.1039/C0EE00549E

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