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Paper

V-doped SnS2: a new intermediate band material for a better use of the solar spectrum

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Corresponding authors
a
Instituto de Energía Solar, Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
E-mail: perla@etsit.upm.es
b
Instituto de Catálisis y Petroleoquímica, CSIC, Marie Curie 2, 28049 Madrid, Spain
E-mail: jcconesa@icp.csic.es
Phys. Chem. Chem. Phys., 2011,13, 20401-20407

DOI: 10.1039/C1CP22664A
Received 19 Aug 2011, Accepted 16 Sep 2011
First published online 13 Oct 2011
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