Jump to main content
Jump to site search

Issue 47, 2011
Previous Article Next Article

Formation of intra-island grain boundaries in pentacene monolayers

Author affiliations

Abstract

To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O3 treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam deposition (OMBD) and supersonic molecular beam deposition (SuMBD). For pentacene films fabricated by OMBD, higher pentacene island-density and higher polycrystalline island density were observed on UV/O3-treated silicon oxide as compared to pristine silicon oxide. Pentacene films deposited by SuMBD exhibited about one order of magnitude lower island- and polycrystalline island densities compared to OMBD, on both types of substrates. Our results suggest that polycrystalline growth of single islands on amorphous silicon oxide is facilitated by structural/chemical surface pinning centres, which act as nucleation centres for multiple grain formation in a single island. Furthermore, the overall lower intra-island grain boundary density in pentacene films fabricated by SuMBD reduces the number of charge carrier trapping sites specific to grain boundaries and should thus help achieving higher charge carrier mobilities, which are advantageous for their use in organic thin-film transistors.

Graphical abstract: Formation of intra-island grain boundaries in pentacene monolayers

Back to tab navigation

Publication details

The article was received on 11 May 2011, accepted on 04 Oct 2011 and first published on 24 Oct 2011


Article type: Paper
DOI: 10.1039/C1CP21506J
Citation: Phys. Chem. Chem. Phys., 2011,13, 21102-21108
  •   Request permissions

    Formation of intra-island grain boundaries in pentacene monolayers

    J. Zhang, Y. Wu, S. Duhm, J. P. Rabe, P. Rudolf and N. Koch, Phys. Chem. Chem. Phys., 2011, 13, 21102
    DOI: 10.1039/C1CP21506J

Search articles by author

Spotlight

Advertisements