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Issue 3, 2011
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Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field

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Abstract

We report a novel Al2O3 nanoparticle-decorated tubular SiC nanostructure, which shows a remarkable enhanced field emission property with low turn-on and threshold field. The formation of Al2O3 nanoparticle-decorated tubular SiC on Si substrates is achieved in one-step via simple heating evaporation process for the first time. The nanostructure consists of tubular SiC and the Al2O3 nanoparticles, which homogeneously decorate on the surface of the tubular SiC with an average diameter of 7.8 nm and narrow diameter distribution. Moreover, compared with the same density and sized bare tubular SiC, the Al2O3 nanoparticle-decorated tubular SiC nanostructure has an obvious reduction in turn-on (from 8.8 to 2.4 V μm−1) and threshold field (from 23.5 to 5.37 V μm−1). The very low turn-on and threshold field is also comparable to that of carbon nanotubes, which indicates the Al2O3 nanoparticle-decorated tubular SiC is of huge potential application in future field emission display devices.

Graphical abstract: Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field

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Publication details

The article was received on 25 Jul 2010, accepted on 01 Oct 2010 and first published on 09 Nov 2010


Article type: Paper
DOI: 10.1039/C0CP01313G
Citation: Phys. Chem. Chem. Phys., 2011,13, 985-990
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    Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field

    H. Cui, L. Gong, G. Z. Yang, Y. Sun, J. Chen and C. X. Wang, Phys. Chem. Chem. Phys., 2011, 13, 985
    DOI: 10.1039/C0CP01313G

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