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The growth and investigation on Ga-doped ZnO single crystals with high thermal stability and high carrier mobility

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Corresponding authors
a
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, P. R. China
E-mail: fhuang@fjirsm.ac.cn
b
State Key Lab of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, P. R. China
CrystEngComm, 2011,13, 3338-3341

DOI: 10.1039/C1CE05122A
Received 24 Jan 2011, Accepted 18 Mar 2011
First published online 31 Mar 2011
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