Issue 8, 2011
From the journal:

CrystEngComm

Etching-limited branching growth of cuprous oxide during ethanol-assisted solution synthesis†

Shaodong Sun,‡a   Hongjun You,‡a   Chuncai Kong,‡a   Xiaoping Song,a   Bingjun Dinga  and  Zhimao Yang*a  

* Corresponding authors

a School of Science, MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, ShaanXi, P. R. China
E-mail: zmyang@mail.xjtu.edu.cn

Abstract

An etching-limited branching growth mechanism has been elucidated during ethanol-assisted solution synthesis of octahedral Cu2O crystals, which is different from the conventional diffusion-limited aggregate and recent overpotential-limited branching mechanism. It provides an innovative approach for revealing the shape evolution from habit formation (octahedron) to branching growth (hexapod-like architecture) via adjusting the competition between preferential growth and selective oxidative etching, and displays a constructive model system for fundamental research of crystal growth and design.

Graphical abstract: Etching-limited branching growth of cuprous oxide during ethanol-assisted solution synthesis

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Article information

DOI
https://doi.org/10.1039/C1CE05151B
Article type
Communication
Submitted
31 Jan 2011
Accepted
24 Feb 2011
First published
08 Mar 2011

CrystEngComm, 2011,13, 2837-2840

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Etching-limited branching growth of cuprous oxide during ethanol-assisted solution synthesis

S. Sun, H. You, C. Kong, X. Song, B. Ding and Z. Yang, CrystEngComm, 2011, 13, 2837 DOI: 10.1039/C1CE05151B

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