Issue 41, 2011

A core-extended naphthalene diimide as a p-channel semiconductor

Abstract

A novel naphthalene diimide with a fully conjugated, extended π-core was synthesized in a one-pot, two-step reaction. This organic semiconductor exhibits ambipolar transport properties with a large hole mobility of 0.56 cm2 V−1 s−1 and a current on/off ratio of 106 in bottom-gate, top-contact thin-film transistors prepared by vacuum deposition.

Graphical abstract: A core-extended naphthalene diimide as a p-channel semiconductor

Supplementary files

Article information

Article type
Communication
Submitted
18 Aug 2011
Accepted
12 Sep 2011
First published
21 Sep 2011

Chem. Commun., 2011,47, 11504-11506

A core-extended naphthalene diimide as a p-channel semiconductor

S. Suraru, U. Zschieschang, H. Klauk and F. Würthner, Chem. Commun., 2011, 47, 11504 DOI: 10.1039/C1CC15144D

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