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Issue 1, 2010
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Block copolymer multiple patterning integrated with conventional ArF lithography

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Abstract

We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

Graphical abstract: Block copolymer multiple patterning integrated with conventional ArF lithography

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Publication details

The article was received on 13 Jul 2009, accepted on 24 Aug 2009 and first published on 17 Sep 2009


Article type: Paper
DOI: 10.1039/B913853F
Citation: Soft Matter, 2010,6, 120-125
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    Block copolymer multiple patterning integrated with conventional ArF lithography

    S. H. Park, D. O. Shin, B. H. Kim, D. K. Yoon, K. Kim, S. Y. Lee, S. Oh, S. Choi, S. C. Jeon and S. O. Kim, Soft Matter, 2010, 6, 120
    DOI: 10.1039/B913853F

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