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Paper

Wall-to-wall stress induced in (6,5) semiconducting nanotubes by encapsulation in metallic outer tubes of different diameters: A resonance Raman study of individual C60-derived double-wall carbon nanotubes

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Corresponding authors
a
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, USA
b
Institute of Carbon Science and Technology, Shinshu University, 4-17-1 Wakasato, Nagano-shi 380-8553, Japan
c
Faculty of Engineering, Shinshu University 4-17-1 Wakasato, Nagano-shi 380-8553, Japan. AND Institute of Carbon Science and Technology, Shinshu University, 4-17-1 Wakasato, Nagano-shi 380-8553, Japan
d
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, USA
e
Faculty of Engineering, Shinshu University 4-17-1 Wakasato, Nagano-shi 380-8553, Japan. AND Institute of Carbon Science and Technology, Shinshu University, 4-17-1 Wakasato, Nagano-shi 380-8553, Japan
f
Laboratory for Nanoscience and Nanotechnology Research (LINAN) AND Advanced Materials Department, IPICYT, San Luis Potosí 78216, México
g
Department of Physics AND Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, USA
Nanoscale, 2010,2, 406-411

DOI: 10.1039/B9NR00268E
Received 17 Sep 2009, Accepted 22 Oct 2009
First published online 24 Nov 2009
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