Issue 45, 2010
From the journal:

Journal of Materials Chemistry

High performance n-type organic transistors based on a distyrylthiophene derivative†

Jong H. Kim,a   Jong Won Chung,a   Yunoh Jung,a   Seong-Jun Yoon,a   Byeong-Kwan An,b   Hyun Sue Huh,c   Soon W. Leec  and  Soo Young Park*a  

* Corresponding authors

a Center for Supramolecular Optoelectronic Materials and WCU Hybrid Materials Program, Department of Material Science and Engineering, Seoul National University, Seoul, Korea

b Department of Chemistry, The Catholic University of Korea, Bucheon-si, Gyeonggi-do, Korea

c Department of Chemistry, Sungkyunkwan University, Natural Science Campus, Suwon, Korea

Abstract

Organic field-effect transistors (OFETs) based on a distyryl-thiophene (DST) derivative, 3′-(thiophene-2,5-diyl)bis(2-(3,5-bis(trifluoromethyl)phenyl)acrylonitrile (THIO-Y), were fabricated. Attributed to strong intermolecular interactions, dense molecular packing and appropriate energy level, OFETs based on a single crystal and thin film of THIO-Y showed electron mobilities as high as 0.16 and 0.03 cm2 V−1s−1, respectively.

Graphical abstract: High performance n-type organic transistors based on a distyrylthiophene derivative

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Article information

DOI
https://doi.org/10.1039/C0JM02646H
Article type
Communication
Submitted
12 Aug 2010
Accepted
01 Oct 2010
First published
20 Oct 2010

J. Mater. Chem., 2010,20, 10103-10106

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High performance n-type organic transistors based on a distyrylthiophene derivative

J. H. Kim, J. W. Chung, Y. Jung, S. Yoon, B. An, H. S. Huh, S. W. Lee and S. Y. Park, J. Mater. Chem., 2010, 20, 10103 DOI: 10.1039/C0JM02646H

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