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Issue 23, 2010
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In situ STXM investigations of pentacene-based OFETs during operation

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Abstract

Ultrathin pentacene-based organic field-effect transistors (OFETs) on commercially available silicon nitride membranes suitable for transmission X-ray experiments are demonstrated. The devices produced by high-vacuum deposition show excellent electronic performance (µ = 0.6 cm2 V−1 s−1, Ion/off = 106). STXM-experiments recorded with the PolLux microspectroscope correlate structural and electronic properties at highest spatial and spectral resolution while the OFET is operated. Local NEXAFS spectra are used to analyze the different orientations of the pentacene nanocrystals. Spectral changes due to modifications in the electronic structure during OFET operation can hardly be detected with the current setup.

Graphical abstract: In situ STXM investigations of pentacene-based OFETs during operation

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Publication details

The article was received on 15 Feb 2010, accepted on 13 Apr 2010 and first published on 04 May 2010


Article type: Paper
DOI: 10.1039/C0JM00423E
Citation: J. Mater. Chem., 2010,20, 4884-4887
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    In situ STXM investigations of pentacene-based OFETs during operation

    C. Hub, M. Burkhardt, M. Halik, G. Tzvetkov and R. Fink, J. Mater. Chem., 2010, 20, 4884
    DOI: 10.1039/C0JM00423E

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