Jump to main content
Jump to site search

Issue 21, 2010
Previous Article Next Article

Crystal structure and physical properties of the new silicide Hf4CuSi4 with planar CuSi4 rectangles

Author affiliations

Abstract

The new compound Hf4CuSi4 was prepared via a high-temperature reaction in a resistance furnace. Hf4CuSi4 adopts the Y4GaCo4 structure type in the space group C2/m, with cell dimensions of a = 9.6945(8) Å, b = 3.7498(3) Å, c = 8.6531(7) Å, β = 109.912(1)° and V = 295.76(4) Å3. Parts of its structure are reminiscent of HfSi, e.g. its six-membered Hf-channels running along the [100] direction. The hexagonal channels are interconnected via Hf–Hf bonds to a three-dimensional network of Hf atoms. Each channel contains CuSi4/2 strips interconnected via Si atoms to form infinite layers. The Cu atoms are coordinated by four Si atoms in form of a planar rectangle. This material is metallic with a distinct pseudo-gap at 0.45 eV above the Fermi level.

Graphical abstract: Crystal structure and physical properties of the new silicide Hf4CuSi4 with planar CuSi4 rectangles

Back to tab navigation

Supplementary files

Publication details

The article was received on 18 Jan 2010, accepted on 07 Mar 2010 and first published on 26 Apr 2010


Article type: Paper
DOI: 10.1039/C0JM00066C
Citation: J. Mater. Chem., 2010,20, 4356-4360
  •   Request permissions

    Crystal structure and physical properties of the new silicide Hf4CuSi4 with planar CuSi4 rectangles

    M. Guch, A. Assoud and H. Kleinke, J. Mater. Chem., 2010, 20, 4356
    DOI: 10.1039/C0JM00066C

Search articles by author

Spotlight

Advertisements