Fast-heating-vapor-trapping method to aligned indium oxide bi-crystalline nanobelts arrays and their electronic properties

Abstract

Aligned nanowires are likely to be more suitable for applications in electronics and optoelectronics than randomly distributed nanowires. In this paper, by using a fast-heating-vapor-trapping (FHVT) method, we successfully synthesized aligned In₂O₃ nanobelt arrays on an Au-coated silicon substrate without the use of any templates. Studies found that the nanobelts exhibited unique bi-crystalline structures consisting of two single crystalline In₂O₃ nanobelts, most of which have the same growth direction along the [100] plane. Field-effect transistors were fabricated on the basis of single In₂O₃ nanowires and they exhibited typical n-type transistor performance, which showed a decent response to UV light exposure.