Bismuth(III) tert-butoxide [Bi(OtBu)3] was utilised as a single-source precursor to controllably deposit thin films of different phases of bismuth oxide (Bi2O3) on glass substrates vialow-pressure chemical vapour deposition (LPCVD). Band gaps for the different phases have been measured (Eg = 2.3–3.0 eV) and the films displayed excellent photodegradation of water under near-UV irradiation.
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Journal of Materials Chemistry
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