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Issue 1, 2010
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All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

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Abstract

The fabrication and characterisation of solution-processed, all-inorganic light-emitting devices incorporating colloidal CdSe/ZnS quantum dots are presented. Using sol–gel synthetic routes, highly luminescent core–shell QDs are embedded between spin-coated p-type NiO and n-type ZnO charge-transport layers. The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 249 cd m−2.

Graphical abstract: All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

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Publication details

The article was received on 16 Mar 2009, accepted on 30 Jun 2009 and first published on 05 Aug 2009


Article type: Paper
DOI: 10.1039/B905256A
Citation: J. Mater. Chem., 2010,20, 167-172
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    All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

    B. S. Mashford, T. Nguyen, G. J. Wilson and P. Mulvaney, J. Mater. Chem., 2010, 20, 167
    DOI: 10.1039/B905256A

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