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Issue 10, 2010
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Spray-deposited CuInSe2 nanocrystal photovoltaics

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Abstract

Photovoltaic devices (PVs) were fabricated by spray-coating an ink of copper indium diselenide (CIS) nanocrystals as the light-absorbing layer. Without high-temperature post-deposition annealing, PVs were made on glass and plastic substrates with power conversion efficiencies of up to 1.9% and 1.1%, respectively, under AM1.5 illumination. The mild processing conditions also enabled fabrication of alternative device structures that are not compatible with conventional high-temperature PV processing, including substrate and superstrate designs, and devices with transparent back contacts of conducting indium tin oxide (ITO) and plastic substrates. Device performance is observed to be limited by poor charge extraction from the nanocrystal films, with the highest efficiencies being obtained from PVs with relatively thin absorber layers. To improve light absorption without sacrificing internal quantum efficiency, stacked PVs were fabricated, which exhibited improved short-circuit current and power conversion efficiency compared to stand-alone single junction devices.

Graphical abstract: Spray-deposited CuInSe2 nanocrystal photovoltaics

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Publication details

The article was received on 28 May 2010, accepted on 26 Jul 2010 and first published on 06 Sep 2010


Article type: Paper
DOI: 10.1039/C0EE00098A
Citation: Energy Environ. Sci., 2010,3, 1600-1606
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    Spray-deposited CuInSe2 nanocrystal photovoltaics

    V. A. Akhavan, B. W. Goodfellow, M. G. Panthani, D. K. Reid, D. J. Hellebusch, T. Adachi and B. A. Korgel, Energy Environ. Sci., 2010, 3, 1600
    DOI: 10.1039/C0EE00098A

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