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Issue 37, 2010
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Band-offset engineering in organic/inorganic semiconductor hybrid structures

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Abstract

Control over the electronic structure of organic/inorganic semiconductor interfaces is required to realize hybrid structures with tailored opto-electronic properties. An approach towards this goal is demonstrated for a layered hybrid system composed of p-sexiphenyl (6P) and ZnO. The molecular orientation can be switched from “upright-standing” to “flat-lying” by tuning the molecule–substrate interactions through aggregation on different crystal faces. The morphology change has profound consequences on the offsets between the molecular frontier energy levels and the semiconductor band edges. The combination of ZnO surface dipole modification through molecule adsorption and the orientation-dependence of the ionization energy of molecular layers shift these offsets by 0.7 eV. The implications for optimizing hybrid structures with regard to exciton and charge transfer are discussed.

Graphical abstract: Band-offset engineering in organic/inorganic semiconductor hybrid structures

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Publication details

The article was received on 06 Apr 2010, accepted on 30 Jun 2010 and first published on 16 Aug 2010


Article type: Paper
DOI: 10.1039/C004944C
Citation: Phys. Chem. Chem. Phys., 2010,12, 11642-11646
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    Band-offset engineering in organic/inorganic semiconductor hybrid structures

    S. Blumstengel, H. Glowatzki, S. Sadofev, N. Koch, S. Kowarik, J. P. Rabe and F. Henneberger, Phys. Chem. Chem. Phys., 2010, 12, 11642
    DOI: 10.1039/C004944C

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