Jump to main content
Jump to site search

Issue 11, 2010
Previous Article Next Article

Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

Author affiliations

Abstract

In sharp contrast to the general belief in the round shape of In droplets, we report various configurations of In nanostructures. Various configurations of self-assembled In nanostructures are demonstrated by droplet epitaxy on GaAs (100) using molecular beam epitaxy. Square, rectangle, pentagonal geometries and elongated rod-like configurations are realized on GaAs (100). The formation of facets is clearly observed on the top and side of the In nanostructures. Co-existence of both round and square shapes of In nanostructures is captured, which shows the sharp transition between the two.

Graphical abstract: Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

Back to tab navigation
Please wait while Download options loads

Publication details

The article was received on 01 Apr 2010, accepted on 20 May 2010 and first published on 25 Jun 2010


Article type: Communication
DOI: 10.1039/C0CE00057D
Citation: CrystEngComm, 2010,12, 3404-3408
  •   Request permissions

    Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

    J. Lee, Z. Wang, Y. Hirono, E. Kim, N. Kim, S. Park, C. Wang and G. J. Salamo, CrystEngComm, 2010, 12, 3404
    DOI: 10.1039/C0CE00057D

Search articles by author