The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal–organic chemical vapor deposition system
Abstract
Vertically well-aligned
* Corresponding authors
a
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China
E-mail:
songhp@semi.ac.cn, xlliu@semi.ac.cn, qszhu@semi.ac.cn
Fax: +86-10-82304576
Tel: +86-10-82304968
Vertically well-aligned
H. Song, Y. Guo, A. Yang, H. Wei, X. Xu, J. Liu, S. Yang, X. Liu, Q. Zhu and Z. Wang, CrystEngComm, 2010, 12, 3936 DOI: 10.1039/C0CE00046A
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