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Issue 36, 2009
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Stabilization of organic field-effect transistors in hexamethylenetetrathiafulvalene derivatives substituted by bulky alkyl groups

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Abstract

Hexamethylenetetrathiafulvalene (HMTTF) derivatives substituted by tert-butyl, n-pentyl, and 1,1-dimethylpropyl groups are prepared, and the transistor properties are investigated. The compounds substituted by bulky tertiary groups exhibit high mobilities up to 0.98 cm2/Vs in the thin-film transistors and 2.3 cm2/Vs in the single-crystal transistors. At the same time these compounds realize low threshold voltages close to zero and large on–off ratios. The high mobility and the low threshold voltage are maintained more than one month in air. The single-crystal X-ray structure analyses reveal uniform stacking structures. These observations demonstrate that the low threshold voltage and the stable device performance are not solely determined by the energy levels, but are remarkably improved by the closely packed structures derived from the bulky alkyl groups.

Graphical abstract: Stabilization of organic field-effect transistors in hexamethylenetetrathiafulvalene derivatives substituted by bulky alkyl groups

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Publication details

The article was received on 15 Apr 2009, accepted on 10 Jun 2009 and first published on 13 Jul 2009


Article type: Paper
DOI: 10.1039/B907592E
Citation: J. Mater. Chem., 2009,19, 6548-6555
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    Stabilization of organic field-effect transistors in hexamethylenetetrathiafulvalene derivatives substituted by bulky alkyl groups

    M. Kanno, Y. Bando, T. Shirahata, J. Inoue, H. Wada and T. Mori, J. Mater. Chem., 2009, 19, 6548
    DOI: 10.1039/B907592E

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