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Issue 37, 2009
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Nano-propping effect of residual silicas on reversible lithium storage over highly ordered mesoporous SnO2 materials

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Abstract

Highly ordered mesoporous SnO2 materials with residual silica species were successfully synthesized from a mesoporous silica template (SBA-15) via nano-replication and simple etching processes. A tin precursor, SnCl2·2H2O, was infiltrated spontaneously within the mesopores of the silica templates by melting the precursor at 353 K without using a solvent. After the heat-treatment of composite materials at 973 K under static air conditions, the controlled removal of silica templates using NaOH or HF solutions with different concentrations results in the successful preparation of mesoporous SnO2 materials, where the amounts of residual silica species are in the range 0.9–17.4 wt%. The residual silica species induce a nano-propping effect enabling the mesoporous SnO2 material (containing 6.0 wt% of silica species) to remain stable up to 973 K without any significant structural collapse. More importantly, the optimum amount of residual silica species (3.9–6.0 wt%) results in a dramatic reduction in capacity fading after prolonged charging–discharging cycles in Li-ion battery. The mesoporous SnO2 material with 3.9 wt% of silica species still exhibits a large capacity (about 600 mAh g−1) after the 30th cycle, which is probably because the residual silica species act as a physical barrier to suppress the aggregation of Sn clusters formed in the mesoporous SnO2 materials during the reversible lithium storage.

Graphical abstract: Nano-propping effect of residual silicas on reversible lithium storage over highly ordered mesoporous SnO2 materials

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Publication details

The article was received on 23 Mar 2009, accepted on 10 Jun 2009 and first published on 17 Jul 2009


Article type: Paper
DOI: 10.1039/B905743A
Citation: J. Mater. Chem., 2009,19, 6727-6732
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    Nano-propping effect of residual silicas on reversible lithium storage over highly ordered mesoporous SnO2 materials

    J. K. Shon, H. Kim, S. S. Kong, S. H. Hwang, T. H. Han, J. M. Kim, C. Pak, S. Doo and H. Chang, J. Mater. Chem., 2009, 19, 6727
    DOI: 10.1039/B905743A

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