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Issue 19, 2009
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New indolo[3,2-b]carbazole derivatives for field-effect transistor applications

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Abstract

The synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazole (IC) based materials are reported. Instead of adding the long alkyl chains on the nitrogen atoms of the IC backbone like many other IC-based molecules, they were added at both ends of the molecule (octylthiophene, p-octylbenzene). Also, the amine groups on the IC backbone were either free or protected by methyl groups. The impact on the organization and thin-film morphology showed that the molecules stand perpendicular to the surface as demonstrated by XRD and AFM. The highest hole mobility obtained by these new p-type organic semiconductors was 0.22 cm2V−1 s−1 with an on/off ratio of about 105. The best performance was obtained with 3,9-di(p-octylbenzene)-5,11-dihydroxyindolo[3,2-b]carbazole. This performance is one of the best obtained by both IC derivatives and materials containing a secondary amine on the backbone.

Graphical abstract: New indolo[3,2-b]carbazole derivatives for field-effect transistor applications

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Publication details

The article was received on 08 Jan 2009, accepted on 18 Feb 2009 and first published on 20 Mar 2009


Article type: Paper
DOI: 10.1039/B900271E
Citation: J. Mater. Chem., 2009,19, 2921-2928
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    New indolo[3,2-b]carbazole derivatives for field-effect transistor applications

    P. T. Boudreault, S. Wakim, M. L. Tang, Y. Tao, Z. Bao and M. Leclerc, J. Mater. Chem., 2009, 19, 2921
    DOI: 10.1039/B900271E

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