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Issue 22, 2009
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Polyhedral oligomeric silsesquioxane nanocomposites exhibiting ultra-low dielectric constants through POSS orientation into lamellar structures

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Abstract

Polyhedral oligomeric silsesquioxane (POSS) nanocomposite, which is prepared from two liquid monomers and can be processed under the “spinning on” process, exhibits an ultra-low dielectric constant (k) of 1.47. The ultra-low k value of the POSS nanocomposite material is attributed to the formation of a POSS lamellar structure. The nanocomposite material also shows good thermal stability, high glass transition temperature, and re-workable characteristics, warranting its high potential for uses in modern and future microelectronics.

Graphical abstract: Polyhedral oligomeric silsesquioxane nanocomposites exhibiting ultra-low dielectric constants through POSS orientation into lamellar structures

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Publication details

The article was received on 08 Jan 2009, accepted on 04 Mar 2009 and first published on 17 Apr 2009


Article type: Paper
DOI: 10.1039/B900141G
Citation: J. Mater. Chem., 2009,19, 3643-3647
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    Polyhedral oligomeric silsesquioxane nanocomposites exhibiting ultra-low dielectric constants through POSS orientation into lamellar structures

    Y. Liu and M. Fangchiang, J. Mater. Chem., 2009, 19, 3643
    DOI: 10.1039/B900141G

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