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Issue 7, 2009
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Alternative catalysts for VSS growth of silicon and germanium nanowires

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Abstract

Metal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solid-solid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.

Graphical abstract: Alternative catalysts for VSS growth of silicon and germanium nanowires

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Publication details

The article was received on 06 Oct 2008, accepted on 19 Nov 2008 and first published on 07 Jan 2009


Article type: Feature Article
DOI: 10.1039/B817391E
Citation: J. Mater. Chem., 2009,19, 849-857
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    Alternative catalysts for VSS growth of silicon and germanium nanowires

    J. L. Lensch-Falk, E. R. Hemesath, D. E. Perea and L. J. Lauhon, J. Mater. Chem., 2009, 19, 849
    DOI: 10.1039/B817391E

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