Alternative catalysts for VSS growth of silicon and germanium nanowires

Jessica L. Lensch-Falk; Eric R. Hemesath; Daniel E. Perea; Lincoln J. Lauhon

doi:10.1039/B817391E

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Journal of Materials Chemistry

Issue 7, 2009

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Alternative catalysts for VSS growth of silicon and germanium nanowires

Jessica L. Lensch-Falk , Eric R. Hemesath , Daniel E. Perea and Lincoln J. Lauhon

J. Mater. Chem., 2009, 19, 849-857

DOI: 10.1039/B817391E
Received 06 Oct 2008, Accepted 19 Nov 2008
First published on the web 07 Jan 2009
This article is part of the collection: Inorganic nanotubes and nanowires

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Metal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solid-solid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.

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Journal of Materials Chemistry

Alternative catalysts for VSS growth of silicon and germanium nanowires

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