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Issue 10, 2009
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Zinc oxide derived from single source precursor chemistry under chimie douce conditions: formation pathway, defect chemistry and possible applications in thin film printing

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Abstract

A series of zinc complexes with oximate ligands is investigated for their suitability as precursors for zinc oxide in inkjet printing. The variation of hydrogen and alkyl groups in the side chains of the oximate framework (R1–ON–C2O2–R2) of the corresponding zinc complexes influences the decomposition temperature, and also important parameters such as solubility and wettability. Detailed investigations of the degradation mechanism reveal their behavior as excellent single source precursors for ZnO under very mild (chimie douce) conditions. Best results for the formation of zinc oxide thin films are obtained with solutions of [2-(methoxyimino)propanato]zinc in methoxyethanol. By calcincation well adherent (tensile strength of 1.95 (±0.95) MPa) nanocrystalline films of zincite are formed. This technique is applied for inkjet printing of ceramic layers on polyethylene-terephthalate thin films. Results of EPR spectroscopy studies on the ZnO nanoparticles are in accord with a core–shell model in which the grain particles of the core consist of vacancy centers which are electronically different from the surrounding shell of the ZnO nanoparticles.

Graphical abstract: Zinc oxide derived from single source precursor chemistry under chimie douce conditions: formation pathway, defect chemistry and possible applications in thin film printing

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Publication details

The article was received on 18 Sep 2008, accepted on 12 Dec 2008 and first published on 03 Feb 2009


Article type: Paper
DOI: 10.1039/B816376F
Citation: J. Mater. Chem., 2009,19, 1449-1457
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    Zinc oxide derived from single source precursor chemistry under chimie douce conditions: formation pathway, defect chemistry and possible applications in thin film printing

    J. J. Schneider, R. C. Hoffmann, J. Engstler, S. Dilfer, A. Klyszcz, E. Erdem, P. Jakes and R. A. Eichel, J. Mater. Chem., 2009, 19, 1449
    DOI: 10.1039/B816376F

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