Inkjet printed high-mobility indium zinc tin oxide thin film transistors
Abstract
Thin-film transistors based on inkjet printed indium zinc tin oxide (IZTO) channel layers are reported in this paper. The printed IZTO transistor has a high field-effect mobility (µFE = ∼30 cm2V−1 s−1), excellent on-to-off current ratio (>1 × 106) and behaves as an enhancement mode device (turn-on voltage = 2 V). This mobility is an order magnitude higher than previously reported for inkjet printed