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Issue 34, 2009
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Ether-like Si–Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics

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Abstract

Hydrolysis reactions of silyl-germyl triflates are used to produce ether-like Si–Ge hydride compounds including H3SiOSiH3 and the previously unknown O(SiH2GeH3)2. The structural, energetic and vibrational properties of the latter were investigated by experimental and quantum chemical simulation methods. A combined Raman, infrared and theoretical analysis indicated that the compound consists of an equal mixture of linear and gauche isomers in analogy to the butane-like H3GeSiH2SiH2GeH3 with an exceedingly small torsional barrier of ∼0.2 kcal mol−1. This is also corroborated by thermochemistry simulations which indicate that the energy difference between the isomers is less than 1 kcal mol−1. Proof-of-principle depositions of O(SiH2GeH3)2 at 500 °C on Si(100) yielded nearly stoichiometric Si2Ge2O materials, closely reflecting the composition of the molecular core. A complete characterization of the film by RBS, XTEM, Raman and IR ellipsometry revealed the presence of Si0.30Ge0.70 quantum dots embedded within an amorphous matrix of Si–Ge–O suboxide, as required for the fabrication of high performance nonvolatile memory devices. The use of readily available starting materials coupled with facile purification and high yields also makes the above molecular approach an attractive synthesis route to H3SiOSiH3 with industrial applications in the formation of Si–O–N high-k gate materials in high-mobility SiGe based transistors.

Graphical abstract: Ether-like Si–Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics

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Publication details

The article was received on 27 Apr 2009, accepted on 01 Jun 2009 and first published on 15 Jul 2009


Article type: Paper
DOI: 10.1039/B908280H
Citation: Dalton Trans., 2009,0, 6773-6782
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    Ether-like Si–Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics

    J. B. Tice, C. Weng, J. Tolle, V. R. D'Costa, R. Singh, J. Menendez, J. Kouvetakis and A. V. G. Chizmeshya, Dalton Trans., 2009, 0, 6773
    DOI: 10.1039/B908280H

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