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Issue 18, 2009
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High density p-type Bi0.5Sb1.5Te3nanowires by electrochemical templating through ion-track lithography

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Abstract

High density p-type Bi0.5Sb1.5Te3nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type Bi0.5Sb1.5Te3 films is investigated to find out the optimal conditions for the deposition of nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and nanotemplating Bi0.5Sb1.5Te3nanowires. The obtained nanowires have average diameters of 80 nm and lengths of 20 μm, which are equivalent to the pore size and thickness of Kapton foils. The nanowires exhibit a preferential orientation along the {110} plane with a composition of 11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the electrical resistance show the semiconducting nature of the nanowires with a negative temperature coefficient of resistance and band gap energy of 0.089 ± 0.006 eV.

Graphical abstract: High density p-type Bi0.5Sb1.5Te3nanowires by electrochemical templating through ion-track lithography

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Publication details

The article was received on 14 Oct 2008, accepted on 30 Jan 2009 and first published on 25 Feb 2009


Article type: Paper
DOI: 10.1039/B818040G
Citation: Phys. Chem. Chem. Phys., 2009,11, 3584-3590
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    High density p-type Bi0.5Sb1.5Te3nanowires by electrochemical templating through ion-track lithography

    X. Li, E. Koukharenko, I. S. Nandhakumar, J. Tudor, S. P. Beeby and N. M. White, Phys. Chem. Chem. Phys., 2009, 11, 3584
    DOI: 10.1039/B818040G

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