Metal–semiconductor contact in organic thin film transistors

Shi-Woo Rhee; Dong-Jin Yun

doi:10.1039/B805884A

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Journal of Materials Chemistry

Issue 45, 2008

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Metal–semiconductor contact in organic thin film transistors

Shi-Woo Rhee and Dong-Jin Yun

J. Mater. Chem., 2008, 18, 5437-5444

DOI: 10.1039/B805884A
Received 07 Apr 2008, Accepted 01 Aug 2008
First published on the web 02 Oct 2008

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Optimization of the interface between the source/drain electrode and the organic semiconductor is one of the important factors for organic thin film transistor (OTFT) performance along with the insulator–semiconductor interface. In this Feature Article, items needed for the optimization of the metal–semiconductor interface and methods to measure interface properties are reviewed. Various electrode materials are compared in terms of the work function, contact resistance and the pentacene OTFT performance. The effect of surface modification is also discussed. Experimental data obtained in LAMP is introduced to show the effect of the various material properties more clearly.

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Journal of Materials Chemistry

Metal–semiconductor contact in organic thin film transistors

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