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Issue 30, 2008
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The surface chemistry of thin film atomic layer deposition (ALD) processes for electronic device manufacturing

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Abstract

Atomic layer deposition (ALD) is poised to become one of the dominant technologies for the growth of nanometer-thick conformal films in microelectronics processing. ALD is particularly suited for the deposition of isotropic films on complex topographies under mild conditions and with monolayer control. However, many questions concerning the underlying surface chemistry need to be answered before this film deposition methodology can find widespread use. Here we highlight some recent examples of surface-science studies of ALD processes aimed to provide a basic understanding of that chemistry.

Graphical abstract: The surface chemistry of thin film atomic layer deposition (ALD) processes for electronic device manufacturing

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Publication details

The article was received on 05 Mar 2008, accepted on 01 May 2008 and first published on 17 Jun 2008


Article type: Highlight
DOI: 10.1039/B803832E
Citation: J. Mater. Chem., 2008,18, 3521-3526
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    The surface chemistry of thin film atomic layer deposition (ALD) processes for electronic device manufacturing

    F. Zaera, J. Mater. Chem., 2008, 18, 3521
    DOI: 10.1039/B803832E

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