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Issue 5, 2008
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Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols

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Abstract

Thin films of Ga2O3 have been produced from [Ga(NMe2)3]2 and ROH (R = CH2CH2NMe2, CH(CH2NMe2)2, CH(CH3)CH2NMe2, CH2CH2OMe and C(CH3)2CH2OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 °C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures.

Graphical abstract: Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols

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Publication details

The article was received on 10 Sep 2007, accepted on 11 Dec 2007 and first published on 02 Jan 2008


Article type: Paper
DOI: 10.1039/B713804K
Citation: Dalton Trans., 2008, 591-595
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    Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols

    S. Basharat, C. J. Carmalt, R. Binions, R. Palgrave and I. P. Parkin, Dalton Trans., 2008, 591
    DOI: 10.1039/B713804K

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