Thin films of Ga2O3 have been produced from [Ga(NMe2)3]2 and ROH (R = CH2CH2NMe2, CH(CH2NMe2)2, CH(CH3)CH2NMe2, CH2CH2OMe and C(CH3)2CH2OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 °C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures.
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