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Issue 31, 2008
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Electrodeposition of Ge, Si and SixGe1−x from an air- and water-stable ionic liquid

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Abstract

The electrodeposition of Ge, Si and, for the first time, of SixGe1−x from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py1,4]Tf2N) containing GeCl4 and/or SiCl4 as precursors is investigated by cyclic voltammetry and high-resolution scanning electron microscopy. GeCl2 in [Py1,4]Tf2N is electrochemically prepared in a two-compartment cell to be used as Ge precursor instead of GeCl4 in order to avoid the chemical attack of Ge(IV) on deposited Ge. Silicon, germanium and SixGe1−x can be deposited reproducibly and easily in this ionic liquid. Interestingly, the SixGe1−x deposit showed a strong colour change (from red to blue) at room temperature during electrodeposition, which is likely to be due to a quantum size effect. The observed colours are indicative of band gaps between at least 1.5 and 3.2 eV. The potential of ionic liquids in SixGe1−xelectrodeposition is demonstrated.

Graphical abstract: Electrodeposition of Ge, Si and SixGe1−x from an air- and water-stable ionic liquid

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Publication details

The article was received on 24 Apr 2008, accepted on 30 May 2008 and first published on 18 Jun 2008


Article type: Paper
DOI: 10.1039/B806996B
Citation: Phys. Chem. Chem. Phys., 2008,10, 4650-4657
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    Electrodeposition of Ge, Si and SixGe1−x from an air- and water-stable ionic liquid

    R. Al-Salman, S. Z. El Abedin and F. Endres, Phys. Chem. Chem. Phys., 2008, 10, 4650
    DOI: 10.1039/B806996B

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